FORMATION METHOD FOR SILICON OXYNITRIDE FILM, AND SUBSTRATE HAVING SILICON OXYNITRIDE FILM MANUFACTURED USING SAME

Title:

FORMATION METHOD FOR SILICON OXYNITRIDE FILM, AND SUBSTRATE HAVING SILICON OXYNITRIDE FILM MANUFACTURED USING SAME

Document Type and Number:

WIPO Patent Application WO/2011/158119

Kind Code:

A3

Abstract:

The present invention provides a silicon oxynitride film manufacturing method capable of reducing energy costs, and a substrate having a silicon oxynitride film manufactured using the manufacturing method. The method comprises the following: a coating film is formed on the surface of a substrate by coating the surface of the substrate with a film-forming composition containing a polysilazane compound; excess solvent contained in the coating film is removed; and after the solvent has been removed from the coating film, the coating film is exposed to ultraviolet radiation under temperature conditions below 150℃.

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Inventors:

SHINDE NINAD (JP)
NAGAHARA TATSURO (JP)
TAKANO YUSUKE (JP)

Application Number:

PCT/IB2011/001839

Publication Date:

March 01, 2012

Filing Date:

August 10, 2011

Export Citation:

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Assignee:

AZ ELECTRONIC MATERIALS JAPAN (JP)
AZ ELECTRONIC MATERIALS USA (US)
SHINDE NINAD (JP)
NAGAHARA TATSURO (JP)
TAKANO YUSUKE (JP)

International Classes:

H01L21/318

Foreign References:

JP2006261616A	2006-09-28
JP2010080709A	2010-04-08
JP2002270690A	2002-09-20

Other References: