Title:
FORMING A COMPOUND-NITRIDE STRUCTURE THAT INCLUDES A NUCLEATION LAYER
Document Type and Number:
WIPO Patent Application WO/2011/123291
Kind Code:
A3
Abstract:
The present invention generally provides apparatus and methods for forming LED structures. In one embodiment where a sapphire substrate is selected, the growth of bulk Group III-nitrides may be deposited in a HVPE or MOCVD chamber while a separate processing chamber, such as a PVD, MOCVD, CVD, or ALD chamber, may be used to grow buffer layers on the sapphire substrate at lower growth rate. The buffer layer may be GaN, AlN, AlGaN, InGaN, or InAlGaN. In another embodiment where a silicon-based substrate is selected, the growth of bulk Group III-nitrides may be deposited in a HVPE or MOCVD chamber in which an Al-free environment is provided while a separate processing chamber with a Ga-free environment is used to grow a Ga-free buffer layer, such as Al, AlN, or SiN, on the silicon-based substrate. The separate processing chamber may be a PVD, CVD, MOCVD, a plasma assisted MOCVD, or other vapor phase deposition techniques.
Inventors:
SU JIE (US)
Application Number:
PCT/US2011/029463
Publication Date:
April 19, 2012
Filing Date:
March 22, 2011
Export Citation:
Assignee:
APPLIED MATERIALS INC (US)
SU JIE (US)
SU JIE (US)
International Classes:
H01L21/20; H01L33/00
Foreign References:
| US20080050889A1 | 2008-02-28 | |||
| US20070128743A1 | 2007-06-07 | |||
| US20060236923A1 | 2006-10-26 |
Attorney, Agent or Firm:
PATTERSON, B. Todd et al. (L.L.P.3040 Post Oak Blvd., Suite 150, Houston Texas, US)
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