Title:
FORMING A LAYER
Document Type and Number:
WIPO Patent Application WO1994013008
Kind Code:
A3
Abstract:
The method comprises depositing a layer (10) of a material (10) on the surface of an article (1) such that the layer (10) covers the mouth of a recess (3) leaving a void below the closed mouth. Subsequently, without elevating their temperature, the article (1) and layer (10) are subjected to elevated pressures (e.g. pressurised liquid) sufficient to cause the layer (10) to deform into the recess (3). Furthermore, the invention provides a method for forming a layer on such a surface, using the technique of magnetron sputtering and heating the article to increase the mobility of the deposited material. Also provided is apparatus for use in carrying out these methods, which methods are of particular use in the processing of semiconductor wafers.
Inventors:
DOBSON CHRISTOPHER DAVID (GB)
Application Number:
PCT/GB1993/002359
Publication Date:
July 21, 1994
Filing Date:
November 16, 1993
Export Citation:
Assignee:
ELECTROTECH LTD (GB)
DOBSON CHRISTOPHER DAVID (GB)
DOBSON CHRISTOPHER DAVID (GB)
International Classes:
H01L21/285; H01L21/00; H01L21/3205; H01L21/768; (IPC1-7): H01L/
Foreign References:
| EP0430040A2 | 1991-06-05 | |||
| US5011793A | 1991-04-30 | |||
| EP0526889A2 | 1993-02-10 |
Other References:
H.HIGUCHI ET AL.: "PLANAR TECHNOLOGY FOR MULTILAYER METALLIZATION", EXTENDED ABSTRACTS, vol. 80, no. 1, May 1980 (1980-05-01), PRINCETON, NEW JERSEY US, pages 456 - 458
Download PDF: