FORMULATIONS OF SOLUTIONS AND PROCESSES FOR FORMING A SUBSTRATE INCLUDING AN ARSENIC DOPANT

Title:

FORMULATIONS OF SOLUTIONS AND PROCESSES FOR FORMING A SUBSTRATE INCLUDING AN ARSENIC DOPANT

Document Type and Number:

WIPO Patent Application WO/2014/071352

Kind Code:

A3

Abstract:

Formulations of solutions and processes are described to form a substrate including a dopant. In particular implementations, the dopant may include arsenic (As). In an embodiment, a dopant solution is provided that includes a solvent and a dopant. In a particular embodiment, the dopant solution may have a flashpoint that is at least approximately equal to a minimum temperature capable of causing atoms at a surface of the substrate to attach to an arsenic-containing compound of the dopant solution. In one embodiment, a number of silicon atoms at a surface of the substrate are covalently bonded to the arsenic-containing compound.

Inventors:

HOCHSTETLER SPENCER ERICH (US)
POLLARD KIMBERLY DONA (US)
MOODY LESLIE SHANE (US)
MACKENZIE PETER BORDEN (US)
LIU JUNJIA (US)

Application Number:

PCT/US2013/068426

Publication Date:

June 26, 2014

Filing Date:

November 05, 2013

Export Citation:

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Assignee:

DYNALOY LLC (US)

International Classes:

H01L21/228

Foreign References:

US20120003826A1	2012-01-05
US20110186969A1	2011-08-04
US20080122005A1	2008-05-29
US20110081742A1	2011-04-07
US4490192A	1984-12-25

Other References: