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Title:
FURNACE FOR MELTING SILICON OR SILICON ALLOY
Document Type and Number:
WIPO Patent Application WO/2011/048931
Kind Code:
A1
Abstract:
Disclosed are a method and a furnace for melting a silicon raw material or a silicon-based alloy raw material, wherein the raw material is heated by means of a heat generating body that generates heat with a current carried therein, and the raw material is melted in an inert atmosphere with an oxygen partial pressure of 1-1000 Pa. The material of a conventionally used heater is changed, and the silicon or the silicon-based alloy is melted in the furnace which does not need to be in a high-vacuum state. Inclusion of impurities is eliminated by changing the material of the heater, an insulating material and the like as needed. Thus, a single crystalline or polycrystalline silicon or a silicon-based alloy can be manufactured at low cost.

Inventors:
TAKAMURA Hiroshi (187-4 Usuba, Hanakawa-cho, Kitaibaraki-sh, Ibaraki 35, 〒3191535, JP)
高村 博 (〒35 茨城県北茨城市華川町臼場187番地4 JX日鉱日石金属株式会社 磯原工場内 Ibaraki, 〒3191535, JP)
Application Number:
JP2010/067336
Publication Date:
April 28, 2011
Filing Date:
October 04, 2010
Export Citation:
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Assignee:
JX Nippon Mining & Metals Corporation (6-3 Otemachi 2-chome, Chiyoda-ku Tokyo, 64, 〒1008164, JP)
JX日鉱日石金属株式会社 (〒64 東京都千代田区大手町二丁目6番3号 Tokyo, 〒1008164, JP)
TAKAMURA Hiroshi (187-4 Usuba, Hanakawa-cho, Kitaibaraki-sh, Ibaraki 35, 〒3191535, JP)
International Classes:
C01B33/02; C01B33/06; F27B14/04; F27B14/06
Attorney, Agent or Firm:
OGOSHI Isamu (OGOSHI International Patent Office, Daini-Toranomon Denki Bldg. 5F, 1-10, Toranomon 3-chome, Minato-k, Tokyo 01, 〒1050001, JP)
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