GaN III-V COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

Title:

GaN III-V COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

Document Type and Number:

WIPO Patent Application WO/2005/020396

Kind Code:

A1

Abstract:

A GaN III-V compound semiconductor light-emitting device with high luminous efficiency and high reliability is disclosed which has an emission wavelength of not less than 440 nm. A GaN semiconductor laser device (10) comprises a stripe projected portion (18) composed of the surface layer of a sapphire substrate (12), a buffer layer (14) and a first GaN layer (16), and a multilayer structure on the sapphire substrate which is composed of a second GaN layer (20), an n-side cladding layer (22), an n-side guide layer (24), an active layer (26), a deterioration-preventing layer (28), a p-side guide layer (30), a p-side cladding layer (32), and a p-side contact layer (34). The active layer is formed as a quantum well structure of a GaInN barrier layer (36) and a GaInN well layer (38), and a planer crystal defect-suppressing layer (40) composed of an AlGaN layer is interposed between the barrier layer and either or both of the upper and lower surfaces of the well layer. The upper portions of the p-side contact layer and the p-side cladding layer are formed as a stripe ridge (42), and a mesa (44) is formed parallel to the ridge.

Inventors:

TOMIYA SHIGETAKA (JP)
GOTO OSAMU (JP)

Application Number:

PCT/JP2004/012708

Publication Date:

March 03, 2005

Filing Date:

August 26, 2004

Export Citation:

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Assignee:

SONY CORP (JP)
TOMIYA SHIGETAKA (JP)
GOTO OSAMU (JP)

International Classes:

H01L33/06; H01L33/32; H01S5/343; H01S5/20; H01S5/34; (IPC1-7): H01S5/343; H01L33/00

Foreign References:

JP2002261393A	2002-09-13
JP2000261106A	2000-09-22
JPH11330614A	1999-11-30
JPH1065271A	1998-03-06
JPH1174564A	1999-03-16
JPH07122812A	1995-05-12

Other References: