GaN SUBSTRATE, METHOD FOR PRODUCING GaN SUBSTRATE, METHOD FOR PRODUCING GaN CRYSTAL, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2015/107813

A1

The purpose of the present invention is to provide a technique for reducing the number of crystalline regions constituting a disc-like GaN substrate, which is a substrate produced by a tiling method and having an angel between the normal line and m-axis on the main surface of the substrate of 0 to 20º inclusive and a diameter of 45 to 55 mm, to 4 or less. In a preferred embodiment, a disc-like GaN substrate is provided, which has a first main surface and a second main surface that is opposite to the first main surface, and which has an angle between the normal line and m-axis on the first main surface of 0 to 20º inclusive and a diameter of 45 mm or more. The disc-like GaN substrate is composed of at least four crystalline regions each being exposed to both of the first main surface and the second main surface, wherein the at least four crystalline regions are arranged in line along the direction of the orthogonal projection of c-axis on the first main surface.

TSUKADA YUSUKE (JP)
NAGAO SATORU (JP)
KAMADA KAZUNORI (JP)
TASHIRO MASAYUKI (JP)
FUJITO KENJI (JP)
FUJISAWA HIDEO (JP)
MIKAWA YUTAKA (JP)
KAJIMOTO TETSUHARU (JP)
FUKADA TAKASHI (JP)

PCT/JP2014/082859

July 23, 2015

December 11, 2014

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MITSUBISHI CHEM CORP (JP)

C30B29/38; H01L21/205; H01L29/20; H01L33/32

JP2011063504A	2011-03-31
JP2013075791A	2013-04-25
JP2012051746A	2012-03-15
JP2008091837A	2008-04-17
JP2011016676A	2011-01-27
JP2009018971A	2009-01-29

KAWAGUCHI, Yoshiyuki et al. (JP)
Yoshiyuki Kawaguchi (JP)

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