GAIN COUPLING DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREFOR

WIPO Patent Application WO/2019/072185

A1

The present application provides a gain coupling distributed feedback semiconductor laser and a manufacturing method therefor; the manufacturing method periodically controls carrier concentration distribution on a P-plane, such as preparing a periodic conductive region by means of carrier injection, or forming a periodic conductive region by periodically removing, by means of etch, oxidation, etc., part of the structure of an initial high conductive layer; and as the carrier concentration control mode does not damage optical waveguide, the change of properties of optical waveguide caused by stress, oxidation, etc. is avoided. Furthermore, by means of controlling carrier concentration, carriers having a high concentration are formed in a specific region and no carrier is injected in a region where a carrier is not needed, so that the loss caused by introduction of carriers is minimized for whole optical waveguide; especially when there is a backend integrated device, low loss can ensure efficient injection of energy of a laser along optical waveguide into the backend integrated device, improving energy utilization efficiency.

CHEN YONGYI (CN)
JIA PENG (CN)
QIN LI (CN)
NING YONGQIANG (CN)
WANG LIJUN (CN)

PCT/CN2018/109593

April 18, 2019

October 10, 2018

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CHANGCHUN INST OPTICS FINE MECH & PHYSICS CAS (CN)

H01S5/12; H01S5/20; H01S5/22; H01S5/32

CN107611776A	2018-01-19
CN1372151A	2002-10-02
CN105811242A	2016-07-27
US20160359298A1	2016-12-08
CN1823455A	2006-08-23
US20110310915A1	2011-12-22

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