GAIN COUPLING DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREFOR

Title:

GAIN COUPLING DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREFOR

Document Type and Number:

WIPO Patent Application WO/2023/000430

Kind Code:

A1

Abstract:

A gain coupling distributed feedback semiconductor laser and a manufacturing method therefor. The manufacturing method comprises: obtaining a lower structural body of a laser, wherein the lower structural body of the laser comprises a substrate (1), a buffer layer (2) and a lower cladding layer (3), which are sequentially stacked from bottom to top (S101); epitaxially growing a defect-free quantum dot array on an upper surface of the lower structural body of the laser by using in situ laser-induced patterning epitaxial technology, and taking same as an active layer (4), so as to form a gain grating, wherein a Bragg wavelength of the gain grating is located in an effective gain region of the quantum dot array (S102); epitaxially growing an upper cladding layer (5) on an upper surface of the active layer (4), and growing a lower conductive layer (8) on a lower surface of the lower structural body of the laser (S103); growing an insulation layer (6) on an upper surface of the upper cladding layer (5), and etching the insulation layer (6) to form a conductive region (S104); and growing an upper conductive layer (7) on an upper surface of the insulation layer (6), so as to obtain a gain coupling distributed feedback semiconductor laser (S105). An active layer (4) is grown by using in situ laser-induced patterning epitaxial technology, such that the introduction of defects can be prevented; and there is no need to prepare a grating, such that pure gain coupling is realized, and the manufacturing process is very simple.

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Inventors:

PENG CHANGSI (CN)
SHI ZHENWU (CN)
GENG BIAO (CN)
YANG XINNING (CN)
MIU LILI (CN)
ZHUANG SIYI (CN)
QI QIUYUE (CN)

Application Number:

PCT/CN2021/114224

Publication Date:

January 26, 2023

Filing Date:

August 24, 2021

Export Citation:

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Assignee:

UNIV SOOCHOW (CN)

International Classes:

H01S5/12

Domestic Patent References:

WO2005112210A1

2005-11-24

Foreign References:

CN107424914A	2017-12-01
CN112072466A	2020-12-11
CN106785884A	2017-05-31
CN107611776A	2018-01-19
CN2468193Y	2001-12-26
US5703899A	1997-12-30

Attorney, Agent or Firm:

UNITALEN ATTORNEYS AT LAW (CN)

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