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Title:
GALLIUM ARSENIDE CRYSTAL SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2019/163081
Kind Code:
A1
Abstract:
A gallium arsenide crystal substrate has a diameter of 150 to 205 mm inclusive and a thickness of 300 to 800 μm inclusive and contains either one of a flat part and a notched part, wherein, in either one of a first flat part area and a first notched part area, the average dislocation density is 0 to 15000 cm-2 inclusive when the silicon atom concentration is 3.0 × 1016 to 3.0 × 1019 cm-3 inclusive and the average dislocation density is 3000 to 20000 cm-2 inclusive when the carbon atom concentration is 1.0 × 1015 to 5.0 × 1017 cm-3 inclusive.

Inventors:
MORISHITA MASANORI (JP)
TAKAYAMA HIDETOSHI (JP)
HIGUCHI YASUAKI (JP)
HAGI YOSHIAKI (JP)
Application Number:
PCT/JP2018/006654
Publication Date:
August 29, 2019
Filing Date:
February 23, 2018
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
C30B29/42
Domestic Patent References:
WO2010084878A12010-07-29
Foreign References:
JP2008239480A2008-10-09
JP2012031004A2012-02-16
JP2000103699A2000-04-11
JPH05339100A1993-12-21
JP2008239480A2008-10-09
Other References:
W. A. GAULT ET AL.: "The Growth of High Quality III-V Crystal by the Vertical Gradient Freeze Method", DEFECT CONTROL IN SEMICONDUCTORS, 1990, pages 653 - 660
M. YAMADA: "High-sensitivity computer-controlled infrared polariscope", REVIEW OF SCIENTIFIC INSTRUMENTS, vol. 64, no. 7, July 1993 (1993-07-01), pages 1815 - 1821, XP000387117, DOI: 10.1063/1.1144016
See also references of EP 3757261A4
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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