Title:
GALLIUM ARSENIDE SOLAR CELL WITH ANTI-REFLECTION LAYER
Document Type and Number:
WIPO Patent Application WO/2019/000476
Kind Code:
A1
Abstract:
Provided is a gallium arsenide solar cell having an anti-reflection layer. The gallium arsenide solar cell sequentially comprises: a gallium arsenide substrate (10); a back electric field layer (20) on the gallium arsenide substrate; a gallium arsenide p-n junction on the back electric field layer, the gallium arsenide p-n junction comprising an n-type gallium arsenide layer (31) and a p-type gallium arsenide layer (32) disposed in a stacking manner; an aluminum gallium arsenide window layer (40) on the gallium arsenide p-n junction; an electrode contact layer (50) on the aluminum gallium arsenide window layer; an anti-reflection layer (61, 62) on the electrode contact layer; and a plurality of electrodes (70) on the electrode contact layer. By adding an anti-reflection structure, the reflected light can be greatly reduced, and the photoelectric conversion efficiency of the solar cell is improved.
Inventors:
HUANG XIAORU (CN)
Application Number:
PCT/CN2017/091447
Publication Date:
January 03, 2019
Filing Date:
July 03, 2017
Export Citation:
Assignee:
HAIMEN THE XIUYU IND DESIGN CO LTD (CN)
International Classes:
H01L31/0216
Domestic Patent References:
| WO2014024554A1 | 2014-02-13 |
Foreign References:
| CN106784127A | 2017-05-31 | |||
| CN103165686A | 2013-06-19 |
Attorney, Agent or Firm:
NANJING LI&FENG INTELLECTUAL PROPERTY AGENCY(SPECIAL GENERAL PARTNERSHIP) (CN)
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