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Title:
GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/102011
Kind Code:
A1
Abstract:
Provided is a method that is for producing a semiconductor device, produces a gallium nitride-based semiconductor device, and is provided with: a first semiconductor layer forming step that forms a first semiconductor layer comprising a gallium nitride-based semiconductor; and a recess-forming step that, using a bromine-based gas, dry etches a portion of the first semiconductor layer via a microwave plasma process, forming a recess.

Inventors:
KAMBAYASHI, Hiroshi (2-4-3 Okano, Nishi-ku, Yokohama-sh, Kanagawa 73, 〒2200073, JP)
神林 宏 (〒73 神奈川県横浜市西区岡野2丁目4番3号 次世代パワーデバイス技術研究組合内 Kanagawa, 〒2200073, JP)
TERAMOTO, Akinobu (1-1 Katahira 2-chome, Aoba-ku, Sendai-sh, Miyagi 77, 〒9808577, JP)
Application Number:
JP2012/000404
Publication Date:
August 02, 2012
Filing Date:
January 23, 2012
Export Citation:
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Assignee:
Advanced Power Device Research Association (2-4-3, Okano Nishi-ku, Yokohama-sh, Kanagawa 73, 〒2200073, JP)
次世代パワーデバイス技術研究組合 (〒73 神奈川県横浜市西区岡野2-4-3 Kanagawa, 〒2200073, JP)
National University Corporation Tohoku University (1-1 Katahira 2-chome, Aoba-ku Sendai-sh, Miyagi 77, 〒9808577, JP)
国立大学法人東北大学 (〒77 宮城県仙台市青葉区片平二丁目1番1号 Miyagi, 〒9808577, JP)
KAMBAYASHI, Hiroshi (2-4-3 Okano, Nishi-ku, Yokohama-sh, Kanagawa 73, 〒2200073, JP)
International Classes:
H01L21/3065; H01L21/20; H01L21/306; H01L21/338; H01L29/778; H01L29/78; H01L29/786; H01L29/812
Attorney, Agent or Firm:
RYUKA IP Law Firm (22F Shinjuku L Tower, 6-1, Nishi-Shinjuku 1-chome,,Shinjuku-k, Tokyo 22, 〒1631522, JP)
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Claims: