Title:
GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/141618
Kind Code:
A1
Abstract:
Disclosed is a gallium nitride-based semiconductor device. The semiconductor device comprises: a gallium nitride substrate; a lower gallium nitride layer formed on the gallium nitride substrate; an n-type upper gallium nitride layer formed on the lower gallium nitride layer; and an intermediate layer interposed between the lower gallium nitride layer and the upper gallium nitride layer. Here, the intermediate layer is a gallium nitride-based semiconductor layer that contains aluminum and has a band gap wider than that of a gallium nitride layer. The present invention provides a gallium nitride-based semiconductor layer having superior crystal quality on a gallium nitride substrate by adopting an intermediate layer.
Inventors:
JUNG JUNG WHAN (KR)
KIM CHAE HON (KR)
CHOI SEUNG KYU (KR)
KIM CHAE HON (KR)
CHOI SEUNG KYU (KR)
Application Number:
PCT/KR2013/002327
Publication Date:
September 26, 2013
Filing Date:
March 21, 2013
Export Citation:
Assignee:
SEOUL OPTO DEVICE CO LTD (KR)
International Classes:
H01L33/30; H01L21/20; H01L33/12; H01L33/32
Foreign References:
| KR20090083566A | 2009-08-04 | |||
| JP2010040828A | 2010-02-18 | |||
| JP2011061086A | 2011-03-24 | |||
| JP2003069159A | 2003-03-07 | |||
| KR20070030723A | 2007-03-16 |
Attorney, Agent or Firm:
AIP PATENT & LAW FIRM (823-14 Yeoksam-dong,Gangnam-gu, Seoul 135-933, KR)
Download PDF: