Title:
GALLIUM NITRIDE-BASED SINTERED BODY AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2020/075661
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide: a large-scale gallium nitride-based sintered body having a low amount of oxygen and high strength; a large-scale gallium nitride-based sintered body that contains a dopant and has a low amount of oxygen, and that is for obtaining a high-crystalline gallium nitride thin film having become an n-type or p-type semiconductor because of the dopant; and a method for manufacturing the gallium nitride-based sintered body. This gallium nitride-based sintered body is characterized by having an oxygen content of 1 atm% or less and an average particle diameter (D50) of 1-150 μm.
Inventors:
MESUDA MASAMI (JP)
KURAMOCHI HIDETO (JP)
TSUCHIDA YUYA (JP)
KURAMOCHI HIDETO (JP)
TSUCHIDA YUYA (JP)
Application Number:
PCT/JP2019/039438
Publication Date:
April 16, 2020
Filing Date:
October 07, 2019
Export Citation:
Assignee:
TOSOH CORP (JP)
International Classes:
C04B35/58; C01B21/06; C04B35/645; C23C14/34; H01L21/203
Foreign References:
| JP2017024970A | 2017-02-02 | |||
| JP2018119171A | 2018-08-02 | |||
| JP2000313670A | 2000-11-14 | |||
| JP2005508822A | 2005-04-07 | |||
| JPH11172424A | 1999-06-29 | |||
| JP2005508822A | 2005-04-07 | |||
| JP2012144424A | 2012-08-02 | |||
| JP2014159368A | 2014-09-04 | |||
| JP2014091851A | 2014-05-19 | |||
| JP2018191481A | 2018-11-29 | |||
| JP2018201609A | 2018-12-27 | |||
| JP2018201368A | 2018-12-27 |
Other References:
See also references of EP 3865466A4
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