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Title:
GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2008/059904
Kind Code:
A1
Abstract:
Provided is a gallium nitride compound semiconductor light emitting element having excellent light taking efficiency and light distribution uniformity. The gallium nitride compound semiconductor light emitting element is composed of a substrate and a gallium nitride compound semiconductor layer laminated on the substrate. At least on one surface on the side of a light emitting element, a lower portion (substrate side) of the semiconductor layer is reversely tapered with an inclination of 5-85° from a substrate main surface, and an upper portion is forwardly tapered with an inclination of 95-175° from the substrate main surface.

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Inventors:
MURAKI NORITAKA (JP)
FUKUNAGA NAOKI (JP)
Application Number:
PCT/JP2007/072142
Publication Date:
May 22, 2008
Filing Date:
November 08, 2007
Export Citation:
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Assignee:
SHOWA DENKO KK (JP)
MURAKI NORITAKA (JP)
FUKUNAGA NAOKI (JP)
International Classes:
H01L33/10; H01L33/20; H01L33/32
Foreign References:
JP2005276900A2005-10-06
JPH09107123A1997-04-22
JPH10200156A1998-07-31
JPH07131066A1995-05-19
JP2006253670A2006-09-21
JP2005150675A2005-06-09
JP2003338637A2003-11-28
JP2006066422A2006-03-09
Attorney, Agent or Firm:
AOKI, Atsushi et al. (Toranomon 37 Mori Bldg.5-1, Toranomon 3-chom, Minato-ku Tokyo 23, JP)
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