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Patent Searching and Data


Title:
GALLIUM NITRIDE CRYSTAL SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2019/163083
Kind Code:
A1
Abstract:
This gallium nitride crystal substrate has a diameter of 50-155 mm and a thickness of 300-800 μm, and includes any one among a flat part and a notch part in a portion of the outer edge thereof. The gallium nitride crystal substrate also contains any one among oxygen atoms, silicon atoms, and carriers which have a concentration of 2×1017 cm-3 to 4×1018 cm-3, and has an average dislocation density of 1000 cm-2 to 5×107 cm-2 in any one among a first flat part area that has a width ranging from the flat part to a position separated by a distance of 2 mm in a perpendicular direction from a straight line representing the flat part in a main surface, and a first notch part area that has a width ranging from the notch part to a position separated by a distance of 2 mm in a perpendicular direction from a curve representing the notch part in a main surface.

Inventors:
YOSHIZUMI, Yusuke (5-33, Kitahama 4-chome, Chuo-ku, Osaka-sh, Osaka 41, 〒5410041, JP)
OSADA, Hideki (5-33, Kitahama 4-chome, Chuo-ku, Osaka-sh, Osaka 41, 〒5410041, JP)
MINOBE, Shugo (5-33, Kitahama 4-chome, Chuo-ku, Osaka-sh, Osaka 41, 〒5410041, JP)
HAGI, Yoshiaki (5-33, Kitahama 4-chome, Chuo-ku, Osaka-sh, Osaka 41, 〒5410041, JP)
Application Number:
JP2018/006656
Publication Date:
August 29, 2019
Filing Date:
February 23, 2018
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES, LTD. (5-33, Kitahama 4-chome Chuo-ku, Osaka-sh, Osaka 41, 〒5410041, JP)
International Classes:
C30B29/38; C30B29/40; H01L21/02
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (Nakanoshima Festival Tower West, 2-4 Nakanoshima 3-chome, Kita-ku, Osaka-sh, Osaka 05, 〒5300005, JP)
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