GALLIUM NITRIDE FIELD EFFECT TRANSISTOR STRUCTURE AND PREPARATION METHOD

Title:

GALLIUM NITRIDE FIELD EFFECT TRANSISTOR STRUCTURE AND PREPARATION METHOD

Document Type and Number:

WIPO Patent Application WO/2023/178684

Kind Code:

A1

Abstract:

Embodiments of the present application provide a gallium nitride field effect transistor structure and a preparation method. The complementary field effect transistor structure comprises: a substrate; a first epitaxial structure disposed on the substrate; and a semiconductor layer disposed on the first epitaxial structure, a groove being formed on the upper surface of the semiconductor layer, a first filling material being disposed on an inner wall of the groove, and a second filling material being disposed on the surface of the first filling material; a first source electrode structure, a first drain electrode structure and a first gate electrode structure, disposed on the semiconductor layer, the first source electrode structure and the first drain electrode structure being disposed on two sides of the first gate electrode structure, respectively, and isolated from each other, and the first gate electrode structure being disposed on the second filling material, such that the resistance of the conductive channel in the gallium nitride transistor may be reduced, and the working speed of the gallium nitride transistor is improved.

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Inventors:

LU WEI (CN)
MA JUNCAI (CN)
LI SHUIMING (CN)
MA PING (CN)

Application Number:

PCT/CN2022/083160

Publication Date:

September 28, 2023

Filing Date:

March 25, 2022

Export Citation:

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Assignee:

HUAWEI TECH CO LTD (CN)

International Classes:

H01L29/778; H01L21/8234; H01L21/8238; H01L27/092; H01L29/06; H01L29/423

Foreign References:

CN113889531A	2022-01-04
CN113571516A	2021-10-29
CN113013242A	2021-06-22
CN107735863A	2018-02-23
US20130168737A1	2013-07-04

Attorney, Agent or Firm:

BEIJING RUN ZEHENG INTELLECTUAL PROPERTY LAW FIRM (CN)

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