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Title:
GALLIUM NITRIDE PARTICLES AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2018/230663
Kind Code:
A1
Abstract:
Provided are gallium nitride particles which make it possible to produce a gallium nitride sputtering target having a high density and high strength, have a reduced oxygen content, and have high moldability. A mixed powder of gallium oxide and gallium nitride is reacted with each other at a temperature of 1000 to 1100°C so that the ammonia reaction amount per hour can become a 1-fold molar amount or more greater than the amount of gallium introduced. As a result, gallium nitride particles can be produced, which have an oxygen content of 1 atm% or less and an average primary particle diameter of 5 μm or more, wherein the particle diameters of particles included in a 10% area % as observed from the smallest particle diameter in the particle size distribution (i.e., a 10% particle diameter) is 3 μm or less.

Inventors:
MESUDA MASAMI (JP)
KURAMOCHI HIDETO (JP)
Application Number:
PCT/JP2018/022788
Publication Date:
December 20, 2018
Filing Date:
June 14, 2018
Export Citation:
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Assignee:
TOSOH CORP (JP)
International Classes:
C01B21/06; C04B35/58; C23C14/34
Domestic Patent References:
WO2016158651A12016-10-06
Foreign References:
JP2013129568A2013-07-04
JP2012144424A2012-08-02
JP2014234336A2014-12-15
JP2015180599A2015-10-15
JP2009520678A2009-05-28
Other References:
KIYONO, HAJIME ET AL.: "Nitridation mechanism of beta-Gallium Oxide by ammonia and fabrication of Gallium-Nitride Nano-particles and Nano-rods", JOURNAL OF THE JAPANESE ASSOCIATION OF CRYSTAL GROWTH, vol. 37, no. 4, 2010, pages 304 - 309
JANIK, J.F. ET AL.: "Tuning aerosol-assisted vapor phase processing towards low oxygen GaN powders", PHYSICA STATUS SOLIDI (A), vol. 203, no. 6, 2006, pages 1301 - 1306, XP055646942, DOI: 10.1002/pssa.200566134
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