Title:
GALLIUM NITRIDE SELF-SUPPORTING SUBSTRATE, LIGHT-EMITTING ELEMENT, AND PRODUCTION METHODS THEREFOR
Document Type and Number:
WIPO Patent Application WO/2016/051890
Kind Code:
A1
Abstract:
Provided is a gallium nitride self-supporting substrate comprising a plate configured by a plurality of gallium nitride single crystal particles having a single crystal structure in an approximately normal direction. This gallium nitride self-supporting substrate can be produced by a method comprising: the step of preparing an oriented polycrystalline sintered body; the step of forming, on the oriented polycrystalline sintered body, a seed crystal layer comprising gallium nitride in such a manner as to have a crystal orientation that follows approximately the crystal orientation of the oriented polycrystalline sintered body; the step of forming, on the seed crystal layer, a layer comprising gallium nitride crystals of 20 μm or greater in thickness in such a manner as to have a crystal orientation that follows approximately the crystal orientation of the seed crystal layer; and the step of removing the oriented polycrystalline sintered body to obtain the gallium nitride self-supporting substrate. The present invention can provide a gallium nitride self-supporting substrate that is inexpensive, suitable for a larger surface area, and useful as an alternative material to a gallium nitride single crystal substrate.
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Inventors:
WATANABE MORIMICHI (JP)
YOSHIKAWA JUN (JP)
NANATAKI TSUTOMU (JP)
IMAI KATSUHIRO (JP)
SUGIYAMA TOMOHIKO (JP)
YOSHINO TAKASHI (JP)
TAKEUCHI YUKIHISA (JP)
SATO KEI (JP)
YOSHIKAWA JUN (JP)
NANATAKI TSUTOMU (JP)
IMAI KATSUHIRO (JP)
SUGIYAMA TOMOHIKO (JP)
YOSHINO TAKASHI (JP)
TAKEUCHI YUKIHISA (JP)
SATO KEI (JP)
Application Number:
PCT/JP2015/068391
Publication Date:
April 07, 2016
Filing Date:
June 25, 2015
Export Citation:
Assignee:
NGK INSULATORS LTD (JP)
International Classes:
C30B29/38; H01L33/02
Domestic Patent References:
| WO2009044638A1 | 2009-04-09 | |||
| WO2014192911A1 | 2014-12-04 |
Foreign References:
| JPH0927636A | 1997-01-28 | |||
| JP2009073710A | 2009-04-09 | |||
| JP2004359495A | 2004-12-24 |
Other References:
TSUTOMU ARAKI ET AL.: "Crystal Growth and Characterization of Polycrystalline GaN on Silica Glass by ECR-MBE", JOURNAL OF THE JAPANESE ASSOCIATION OF CRYSTAL GROWTH, vol. 30, no. 2, 2003, pages 73 - 81
P. R. HAGEMAN ET AL.: "GaN growth on single- crystal diamond substrates by metalorganic chemical vapour deposition and hydride vapour deposition", THIN SOLID FILMS, vol. 443, 2003, pages 9 - 13, XP004458334, DOI: doi:10.1016/S0040-6090(03)00906-4
F.R. HU ET AL.: "Molecular beam epitaxial growth of GaN thin film on Si substrate with InN as interlayer", JOURNAL OF CRYSTAL GROWTH, vol. 294, pages 197 - 201, XP028016898, DOI: doi:10.1016/j.jcrysgro.2006.07.009
P. R. HAGEMAN ET AL.: "GaN growth on single- crystal diamond substrates by metalorganic chemical vapour deposition and hydride vapour deposition", THIN SOLID FILMS, vol. 443, 2003, pages 9 - 13, XP004458334, DOI: doi:10.1016/S0040-6090(03)00906-4
F.R. HU ET AL.: "Molecular beam epitaxial growth of GaN thin film on Si substrate with InN as interlayer", JOURNAL OF CRYSTAL GROWTH, vol. 294, pages 197 - 201, XP028016898, DOI: doi:10.1016/j.jcrysgro.2006.07.009
Attorney, Agent or Firm:
TAKAMURA Masaharu et al. (JP)
Masaharu Takamura (JP)
Masaharu Takamura (JP)
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