Title:
GALLIUM OXIDE-DOPED CRYSTALLINE MATERIAL, PREPARATION METHOD AND APPLICATION THEREOF
Document Type and Number:
WIPO Patent Application WO/2018/137673
Kind Code:
A1
Abstract:
The invention discloses a VB group element doped with a β-gallium oxide crystalline material, and a preparation method and application thereof. The series doped with the β-Ga2O3 crystalline material is monoclinic, the space group is C2/m, the resistivity is in the range of 2.0×10-4 to 1×104 Ω·cm, and/or the carrier concentration is in the range of 5×1012 to 7×1020 / cm3. The preparation method comprises steps of: mixing M2O5 and Ga2O3 with a purity of 4N or more at a molar ratio of (0.000000001-0.01):(0.999999999-0.99); and then performing crystal growth. The invention can prepare a high-conductivity β-Ga2O3 crystalline material with n-type conductivity characteristics by conventional processes, providing a basis for applications thereof to electrically powered electronic devices, optoelectronic devices, photocatalysts or conductive substrates.
Inventors:
XIA CHANGTAI (CN)
SAI QINGLIN (CN)
ZHOU WEI (CN)
QI HONGJI (CN)
SAI QINGLIN (CN)
ZHOU WEI (CN)
QI HONGJI (CN)
Application Number:
PCT/CN2018/074058
Publication Date:
August 02, 2018
Filing Date:
January 24, 2018
Export Citation:
Assignee:
SHANGHAI INST OPTICS & FINE MECH CAS (CN)
International Classes:
C30B29/16; C30B13/00; C30B15/00; H01L31/032
Foreign References:
| CN103878010A | 2014-06-25 | |||
| CN102431977A | 2012-05-02 | |||
| CN1469842A | 2004-01-21 | |||
| JP2004262684A | 2004-09-24 | |||
| US20070166967A1 | 2007-07-19 | |||
| JP2015083536A | 2015-04-30 |
Other References:
APPLIED PHYSICS LETTERS, vol. 92, 2008, pages 202120
THIN SOLID FILMS, vol. 516, no. 17, 2008, pages 5763 - 5767
See also references of EP 3572561A4
THIN SOLID FILMS, vol. 516, no. 17, 2008, pages 5763 - 5767
See also references of EP 3572561A4
Attorney, Agent or Firm:
SHANGHAI HENGHUI INTELLECTUAL PROPERTY AGENCY (CN)
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