GALLIUM OXIDE SCHOTTKY DIODE AND MANUFACTURING METHOD THEREFOR - THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION

Title:

GALLIUM OXIDE SCHOTTKY DIODE AND MANUFACTURING METHOD THEREFOR

Document Type and Number:

WIPO Patent Application WO/2021/139039

Kind Code:

A1

Abstract:

Provided are a gallium oxide Schottky diode and a manufacturing method therefor. The gallium oxide Schottky diode sequentially comprises, from bottom to top, a cathode metal layer (11), a high-doped gallium oxide substrate (12), a low-doped gallium oxide epitaxial layer (13), anode metal (151), and an anode field plate (152), wherein the upper part of the low-doped gallium oxide epitaxial layer (13) further comprises a plurality of dielectric layers (141, 142) distributed around the anode metal (151); the corrosion rate of each dielectric layer (141, 142) of the plurality of dielectric layers (141, 142) reduces as the number of the layer where the dielectric layer is located increases; and the top layer (142) of the plurality of dielectric layers (141, 142) is in contact with the anode metal (151), and the bottom layer (141) of the plurality of dielectric layers (141, 142) is separated from the anode metal (151). The influence of an interface state on the electric leakage of a device can be improved, a breakdown property of the device is improved, and better structural symmetry is provided.

More Like This:

WO/2012/164082	PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND AN INTERMEDIATE PRODUCT FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE
JP2002025935	CONDUCTOR MEMBER FORMING METHOD AND PATTERN FORMING METHOD
JP4615187	Manufacturing method of semiconductor device having T-shaped contact electrode

Inventors:

LV YUANJIE (CN)
WANG YUANGANG (CN)
ZHOU XINGYE (CN)
LIU HONGYU (CN)
SONG XUBO (CN)
LIANG SHIXIONG (CN)
MA CHUNLEI (CN)
XU SENFENG (CN)
FENG ZHIHONG (CN)

Application Number:

PCT/CN2020/086191

Publication Date:

July 15, 2021

Filing Date:

April 22, 2020

Export Citation:

Click for automatic bibliography generation Help

Assignee:

THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION (CN)

International Classes:

H01L21/335; H01L29/872; H01L29/06

Foreign References:

CN106876484A	2017-06-20
US6653707B1	2003-11-25
CN103107151A	2013-05-15
US20160042949A1	2016-02-11

Attorney, Agent or Firm:

SHIJIAZHUANG GOWELL INTELLECTUAL PROPERTY LAW FIRM (CN)

Download PDF:

View/Download PDF PDF Help

Previous Patent: ORGANIC LIGHT-EMITTING DIODE DEVICE STRUCTURE AND FABRICATION METHOD THEREFOR

Next Patent: GALLIUM OXIDE FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR