Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
GAN POWER TRANSISTOR DRIVING CIRCUIT AND METHOD, AND CORRESPONDING ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/258660
Kind Code:
A1
Abstract:
A GaN power transistor driving circuit (1) and method, and an electronic device. The driving circuit (1) comprises an alternating current driving unit (12) and a direct current driving unit (11); the alternating current driving unit (12) is used for outputting a driving signal to the gate of a GaN power transistor (2) according to a first control signal to drive the GaN power transistor (2) to turn on/off; the driving signal comprises a low-level driving signal and a high-level driving signal; the driving signal is synchronously changed with the first control signal; the direct current driving unit (11) is used for controlling, according to a second control signal, the voltage of the high-level driving signal to be at a first voltage and the voltage of the low-level driving signal to be at a second voltage. The driving circuit (1) implements on/off of the GaN power transistor (2) by means of the alternating current driving unit (12), and controls, by means of the direct current driving unit (11), the driving voltage to be at a constant voltage value when the GaN power transistor (2) is turned on/off, thereby meeting requirements for the characteristics of low threshold voltage and narrow-range gate-source operating voltage of the GaN power transistor (2), and improving reliability while fully utilizing the electrical performance advantages thereof.

Inventors:
ZHANG CHENGLONG (CN)
GUO CHUNMING (CN)
LI SHENGFENG (CN)
Application Number:
PCT/CN2020/135474
Publication Date:
December 30, 2021
Filing Date:
December 10, 2020
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
HUAYUAN SEMICONDUCTOR SHENZHEN LTD COMPANY (CN)
International Classes:
H02M1/08
Foreign References:
CN111654178A2020-09-11
CN212183398U2020-12-18
CN108964643A2018-12-07
CN204835905U2015-12-02
CN102195457A2011-09-21
US20160164413A12016-06-09
US20190115914A12019-04-18
Attorney, Agent or Firm:
SHANGHAI HUIHAN INTELLECTUAL PROPERTY LAW FIRM (CN)
Download PDF: