GAN RECTIFIER SUITABLE FOR OPERATING UNDER 35GHZ ALTERNATING-CURRENT FREQUENCY, AND PREPARATION METHOD THEREFOR

WIPO Patent Application WO/2019/114116

A1

A preparation method for a GaN rectifier suitable for operating under a 35GHz alternating-current frequency: successively growing, on a silicon substrate (1), a GaN buffer layer (2), a carbon-doped semi-insulating N-polar surface GaN layer (3), an undoped N-polar surface AlGaN layer (4), an undoped N-polar surface GaN layer (5) and an undoped N-polar surface InGaN film (6), to obtain a rectifier epitaxial wafer; preparing a Schottky contact electrode (8) pattern groove on the GaN rectifier epitaxial wafer, and depositing a Schottky contact electrode in the groove; preparing an Ohmic contact electrode (9) pattern, and depositing a device, which is an Ohmic contact electrode, on a surface of the epitaxial wafer; next, depositing a silicon nitride passivation layer (7) on a part of the surface of the epitaxial wafer with no electrode, and preparing a surface electrode area; and finally, performing table-surface isolation processing on the epitaxial wafer of the GaN rectifier. By means of the preparation method, a high-frequency GaN rectifier is prepared, improving the performance stability of a rectifier device operating under large power.

WANG WENLIANG (CN)
LI GUOQIANG (CN)
LI XIAOCHAN (CN)
LI YUAN (CN)

PCT/CN2018/074684

June 20, 2019

January 31, 2018

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UNIV SOUTH CHINA TECH (CN)

H01L21/328; H01L27/04

CN106449916A	2017-02-22
CN101562182A	2009-10-21
US20070096239A1	2007-05-03

GUANGZHOU HUAXUE INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)

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