Title:
GARNET COMPOUND, OXIDE SINTERED COMPACT, OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, ELECTRONIC DEVICE AND IMAGE SENSOR
Document Type and Number:
WIPO Patent Application WO/2018/181716
Kind Code:
A1
Abstract:
Provided is an oxide sintered compact containing the elements In, Y, and Ga in atomic ratios which fall within the ranges prescribed by formulae (1) to (3). Formula (1): 0.80≤In/(In+Y+Ga) ≤0.96 Formula (2): 0.02≤Y/(In+Y+Ga)≤0.10 Formula (3): 0.02≤Ga/(In+Y+Ga) ≤0.10. Element Al is contained in an atomic ratio which falls within the range prescribed by formula (4). Formula (4): 0.005≤Al/(In+Y+Ga+Al)≤0.07. (In the formula, In, Y, Ga and Al respectively represent the number of atoms of the elements In, Y, Ga and Al in the oxide sintered compact.)
Inventors:
INOUE KAZUYOSHI (JP)
SHIBATA MASATOSHI (JP)
KAWASHIMA EMI (JP)
TSURUMA YUKI (JP)
TOMAI SHIGEKAZU (JP)
SHIBATA MASATOSHI (JP)
KAWASHIMA EMI (JP)
TSURUMA YUKI (JP)
TOMAI SHIGEKAZU (JP)
Application Number:
PCT/JP2018/013243
Publication Date:
October 04, 2018
Filing Date:
March 29, 2018
Export Citation:
Assignee:
IDEMITSU KOSAN CO (JP)
International Classes:
C04B35/01; C23C14/08; C23C14/34; H01L21/363; H01L27/146; H01L29/786
Domestic Patent References:
| WO2010032422A1 | 2010-03-25 | |||
| WO2015098060A1 | 2015-07-02 | |||
| WO2017017966A1 | 2017-02-02 |
Foreign References:
| JP2010045263A | 2010-02-25 | |||
| JP2011119711A | 2011-06-16 | |||
| JP2017178740A | 2017-10-05 | |||
| JP2014214359A | 2014-11-17 |
Other References:
HLASEK, T. ET AL.: "Influence of gallium on infrared luminescence in Er3+ doped Yb3A15-yGay012 films grown by the liquid phase epitaxy", JOURNAL OF LUMINESCENCE, vol. 164, 2015, pages 90 - 93, XP029221576, ISSN: 0022-2313, DOI: doi:10.1016/j.jlumin.2015.03.030
Attorney, Agent or Firm:
KINOSHITA & ASSOCIATES (JP)
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