Title:
GAS BARRIER FILM AND GAS BARRIER FILM FORMATION METHOD
Document Type and Number:
WIPO Patent Application WO/2012/002150
Kind Code:
A1
Abstract:
Disclosed is a gas barrier formation method which, without heat treating a coating film formed by applying a coating liquid containing polysilazanes, has high gas barrier performance achieved by an extremely quick modification treatment of a few seconds; also disclosed is a gas barrier film. In the disclosed gas barrier film formation method, a discharge gas containing an inert gas is supplied to the surface of a coating film formed by coating a substrate with a coating liquid containing polysilazanes. Plasma formed in a discharge space to which a high frequency electric field is applied, or light emitted from said plasma, is irradiated onto the surface of the aforementioned coating film to modify the same and to form a gas barrier film. The aforementioned discharge gas contains at least a carbon dioxide gas or carbon monoxide gas, the content thereof being between 0.01 volume% and 3.0 volume%, and the frequency of the aforementioned high frequency electric field is in the microwave range between 300 and 30,000 MHz.
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Inventors:
TODA Yoshiro (Inc. 1, Sakura-machi, Hino-sh, Tokyo 11, 〒1918511, JP)
Application Number:
JP2011/063676
Publication Date:
January 05, 2012
Filing Date:
June 15, 2011
Export Citation:
Assignee:
Konica Minolta Holdings, Inc. (6-1 Marunouchi 1-chome, Chiyoda-ku Tokyo, 05, 〒1000005, JP)
コニカミノルタホールディングス株式会社 (〒05 東京都千代田区丸の内一丁目６番１号 Tokyo, 〒1000005, JP)
コニカミノルタホールディングス株式会社 (〒05 東京都千代田区丸の内一丁目６番１号 Tokyo, 〒1000005, JP)
International Classes:
B05D5/00; B05D3/04; B05D7/24; C08J7/04; H01L51/50; H05B33/02
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Claims: