GAS BARRIER FILM, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE PROVIDED WITH SAME

Title:

GAS BARRIER FILM, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE PROVIDED WITH SAME

Document Type and Number:

WIPO Patent Application WO/2018/034179

Kind Code:

A1

Abstract:

The present invention addresses the problem of providing a gas barrier film whereby gas barrier properties per unit thickness are enhanced relative to a gas barrier film in which a silicon compound is used, a method for manufacturing the gas barrier film, and an electronic device provided with the gas barrier film. This gas barrier film contains silicon (Si) and an element M in group 5 of the long-form periodic table, the gas barrier film being characterized by having an Si-M bond.

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Inventors:

MORI TAKAHIRO (JP)

Application Number:

PCT/JP2017/028535

Publication Date:

February 22, 2018

Filing Date:

August 07, 2017

Export Citation:

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Assignee:

KONICA MINOLTA INC (JP)

International Classes:

C23C14/08; B32B9/00; C23C14/02; C23C14/34; H01L21/316

Domestic Patent References:

WO2016039060A1

2016-03-17

Foreign References:

JPH0470330A	1992-03-05
JP2005035128A	2005-02-10
JP2013226757A	2013-11-07
JP2010247369A	2010-11-04

Attorney, Agent or Firm:

KOYO INTERNATIONAL PATENT FIRM (JP)

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