Title:
GAS BARRIER FILM, METHOD FOR PRODUCING SAME, AND ELECTRONIC DEVICE USING SAME
Document Type and Number:
WIPO Patent Application WO/2014/119754
Kind Code:
A1
Abstract:
Provided is a gas barrier film which comprises: a base; a barrier layer that is formed on at least one surface of the base by vapor deposition of an inorganic compound; and another barrier layer that is formed on at least the surface, on which the barrier layer formed by vapor deposition of an inorganic compound is provided, by applying a solution containing a polysilazane compound thereto. The barrier layer that is formed by applying a solution containing a polysilazane compound contains at least one element (excluding silicon and carbon) that is selected from the group consisting of group 2, group 13 and group 14 elements of the long form periodic table. This gas barrier film exhibits excellent gas barrier performance, and has excellent storage stability in high-temperature high-humidity environments, especially excellent adhesion properties and excellent folding resistance.
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Inventors:
GOTO YOSHITAKA (JP)
Application Number:
PCT/JP2014/052346
Publication Date:
August 07, 2014
Filing Date:
January 31, 2014
Export Citation:
Assignee:
KONICA MINOLTA INC (JP)
International Classes:
B32B9/00; B05D3/06; B05D7/24; C08J7/043; C08J7/044; C08J7/048; H01L51/50
Domestic Patent References:
WO2012081555A1 | 2012-06-21 | |||
WO2013011872A1 | 2013-01-24 |
Foreign References:
JP2002355930A | 2002-12-10 | |||
JP2012106421A | 2012-06-07 |
Attorney, Agent or Firm:
HATTA & ASSOCIATES (JP)
Hatta international patent business corporation (JP)
Hatta international patent business corporation (JP)
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