Title:
GAS BARRIER FILM AND METHOD FOR PRODUCING GAS BARRIER FILM
Document Type and Number:
WIPO Patent Application WO/2017/068938
Kind Code:
A1
Abstract:
Provided are a gas barrier film having high barrier properties even at high temperatures and high humidity, and a method for producing this gas barrier film. This gas barrier film includes a film base material, a silica layer, and an inorganic layer directly connected to the silica layer, formed in the stated order. The silica layer contains a silica polymer including at least covalent bonds between silicon atoms and oxygen atoms, and an amine having a molecular weight of 200 or higher and a boiling point of 230°C or higher. This method for producing a gas barrier film comprises applying an application liquid that contains a silicon compound and an amine having a molecular weight of 200 or higher and a boiling point of 230°C or higher to a film base material in order to form an application layer that contains the silicon compound, irradiating the application layer that contains the silicon compound with vacuum ultraviolet rays in order to form a silica layer that contains a silica polymer including at least covalent bonds between silicon atoms and oxygen atoms, and forming an inorganic layer on the surface of the silica layer by vapor deposition or sputtering.
Inventors:
KATO SHINYA (JP)
SUZUKI SHINYA (JP)
SUZUKI SHINYA (JP)
Application Number:
PCT/JP2016/079195
Publication Date:
April 27, 2017
Filing Date:
October 03, 2016
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
B32B9/00; C23C14/10; C23C16/42
Domestic Patent References:
| WO2011074363A1 | 2011-06-23 |
Foreign References:
| JPH10279362A | 1998-10-20 | |||
| JP2012000599A | 2012-01-05 |
Attorney, Agent or Firm:
NAKASHIMA Junko et al. (JP)
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