Title:
GAS BARRIER FILM AND METHOD FOR PRODUCING GAS BARRIER FILM
Document Type and Number:
WIPO Patent Application WO/2017/130568
Kind Code:
A1
Abstract:
Provided are a gas barrier film having excellent barrier properties even at high temperatures and high humidity, and a method for producing this gas barrier film. The gas barrier film includes a film substrate, an organic layer, and a silica layer in the stated order. The silica layer includes a silica polymer including at least a covalent bond between a silicon atom and an oxygen atom. The concentration of carbon atoms in the organic layer is at least 50%. In the method for manufacturing the gas barrier film, an organic layer having a carbon atom concentration of at least 50% is formed on a film substrate, a coating solution containing a silicon compound is applied onto the organic layer and a layer containing the silicon compound is formed, the layer containing the silicon compound is irradiated with vacuum UV, and a silica layer including a silica polymer having at least a covalent bond between a silica atom and an oxygen atom is formed.
Inventors:
NAKAYAMA AYA (JP)
Application Number:
PCT/JP2016/085997
Publication Date:
August 03, 2017
Filing Date:
December 05, 2016
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
B32B9/00; C23C14/10; C23C16/42; H01L51/50; H05B33/04; H05B33/10
Domestic Patent References:
WO2015115510A1 | 2015-08-06 | |||
WO2012050161A1 | 2012-04-19 | |||
WO2011074363A1 | 2011-06-23 |
Foreign References:
JP2013063658A | 2013-04-11 | |||
JP2013043382A | 2013-03-04 |
Attorney, Agent or Firm:
NAKASHIMA Junko et al. (JP)
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