Title:
GAS BARRIER FILM
Document Type and Number:
WIPO Patent Application WO/2019/187981
Kind Code:
A1
Abstract:
The present invention addresses the issue of providing a gas barrier film having excellent bending properties. The gas barrier film has: a substrate; a base inorganic layer; a silicon nitride layer formed using the base inorganic layer as the base therefor; and a mixed layer formed at the interface between the base inorganic layer and the silicon nitride layer. The base inorganic layer comprises silicon oxide. The mixed layer contains a component derived from the base inorganic layer and a component derived from the silicon nitride layer. The thickness of the mixed layer is at least 3 nm.
Inventors:
MOCHIZUKI YOSHIHIKO (JP)
SUZUKI SHINYA (JP)
SUZUKI SHINYA (JP)
Application Number:
PCT/JP2019/008100
Publication Date:
October 03, 2019
Filing Date:
March 01, 2019
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
B32B9/00; C23C16/42
Domestic Patent References:
| WO2006033233A1 | 2006-03-30 |
Foreign References:
| JP2014111375A | 2014-06-19 | |||
| JP2016505862A | 2016-02-25 | |||
| JP2016137710A | 2016-08-04 | |||
| JP2017195376A | 2017-10-26 | |||
| JP2017518204A | 2017-07-06 | |||
| JP2008142941A | 2008-06-26 | |||
| JP2008162181A | 2008-07-17 |
Attorney, Agent or Firm:
NAKASHIMA Junko et al. (JP)
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