Title:
GAS FEEDING SYSTEM FOR CHEMICAL VAPOR DEPOSITION REACTOR AND METHOD OF CONTROLLING THE SAME
Document Type and Number:
WIPO Patent Application WO2000015881
Kind Code:
A3
Abstract:
The present invention relates to a gas feeding system, and more particularly, to a gas feeding system for chemical vapor deposition (CVD) reactor capable of improving the uniformity and quality of deposited film in the manufacture of semiconductor devices. The present invention also relates to a method of controlling the same which prevents the waste of reactant source. The gas feeding system of the present invention preferably comprises a plurality of reactant source supply apparatuses, each being connected to the reactor to supply different reactant sources therein discontinuously or sequentially. Each reactant source supply apparatus includes a pass valve to prevent the waste of non-use reactant sources.
Inventors:
LEE KYU-HONG (KR)
KANG WON-GU (KR)
KANG SANG-WON (KR)
KANG WON-GU (KR)
KANG SANG-WON (KR)
Application Number:
PCT/KR1999/000541
Publication Date:
June 08, 2000
Filing Date:
September 14, 1999
Export Citation:
Assignee:
GENITECH CO LTD (KR)
LEE KYU HONG (KR)
KANG WON GU (KR)
KANG SANG WON (KR)
LEE KYU HONG (KR)
KANG WON GU (KR)
KANG SANG WON (KR)
International Classes:
H01L21/205; C23C16/448; C23C16/455; C30B25/14; H01L21/31; (IPC1-7): C23C16/52
Other References:
PATENT ABSTRACTS OF JAPAN
PATENT ABSTRACTS OF JAPAN
PATENT ABSTRACTS OF JAPAN
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