Title:
GAS FIELD IONIZATION SOURCE AND ION BEAM DEVICE
Document Type and Number:
WIPO Patent Application WO/2011/132767
Kind Code:
A1
Abstract:
Disclosed is a gas field ionization source (GFIS) that enables the inclination of an emitter chip to be adjusted, and the operation of which is stable and low cost. The gas field ionization source (GFIS) comprises a support body having a first reference surface perpendicular to the ion optical axis, a chip assembly comprising a base having an emitter chip and a second reference surface, and an inclined spacer positioned between the chip assembly and the support body. The inclined spacer has a fourth reference surface and a third reference surface that is inclined in relation to the fourth reference surface.
Inventors:
KAWANAMI Yoshimi (HITACHI HIGH-TECHNOLOGIES CORPORATION 882, Oaza-Ichige, Hitachinaka-sh, Ibaraki 04, 〒3128504, JP)
Application Number:
JP2011/059895
Publication Date:
October 27, 2011
Filing Date:
April 22, 2011
Export Citation:
Assignee:
HITACHI HIGH-TECHNOLOGIES CORPORATION (24-14, Nishi Shimbashi 1-chome Minato-k, Tokyo 17, 〒1058717, JP)
株式会社日立ハイテクノロジーズ (〒17 東京都港区西新橋一丁目２４番１４号 Tokyo, 〒1058717, JP)
株式会社日立ハイテクノロジーズ (〒17 東京都港区西新橋一丁目２４番１４号 Tokyo, 〒1058717, JP)
International Classes:
H01J27/26; H01J37/04; H01J37/08; H01J37/147; H01J37/317
Attorney, Agent or Firm:
HIRAKI Yusuke et al. (Kamiya-cho MT Bldg. 19F, 3-20 Toranomon 4-chome, Minato-k, Tokyo 01, 〒1050001, JP)
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