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Title:
GAS FLOW SPUTTERING DEVICE, AND METHOD FOR PRODUCING SPUTTERING TARGET STARTING MATERIAL
Document Type and Number:
WIPO Patent Application WO/2018/123550
Kind Code:
A1
Abstract:
Provided is a gas flow sputtering device suited to the long-term and stable production of a sputtering target starting material at a high sputtering rate. A gas flow sputtering device equipped with a pair of plate-shaped targets positioned in a manner such that the sputtering surfaces face one another with an interval interposed therebetween inside a sputtering chamber, a pair of cooling devices for cooling the plate-shaped targets, and a conductive securing member for securing the plate-shaped targets to the cooling devices, wherein: the pair of plate-shaped targets have attachment parts that project from the lateral surfaces thereof, and the pair of plate-shaped targets are secured to the cooling devices while satisfying a positional relationship in which the attachment parts are sandwiched between the securing member and the cooling devices; and the securing member is covered by an insulative shield member that does not contact the pair of plate-shaped targets.

Inventors:
KOSHO TAKASHI (JP)
TAKAMI HIDEO (JP)
NAKAMURA YUICHIRO (JP)
TAKECHI MIKIO (JP)
MIKAMI TOMOHIRO (JP)
Application Number:
PCT/JP2017/044448
Publication Date:
July 05, 2018
Filing Date:
December 11, 2017
Export Citation:
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Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
G11B5/851; C23C14/34
Domestic Patent References:
WO2013136962A12013-09-19
Foreign References:
JP2009066497A2009-04-02
JP2012144793A2012-08-02
JP2013147711A2013-08-01
Attorney, Agent or Firm:
AXIS PATENT INTERNATIONAL (JP)
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