Title:
GAS INLET SYSTEM AND ATOMIC LAYER DEPOSITION APPARATUS AND METHOD
Document Type and Number:
WIPO Patent Application WO/2020/062607
Kind Code:
A1
Abstract:
Disclosed is a gas inlet system, comprising a gas inlet pipeline used for introducing a reaction precursor into a reaction chamber (8) by means of a gas distribution device (7), and provided with a gas inlet on-off valve on the gas inlet pipeline; and further comprising an exhaust pipeline (4) separately is in communication with the gas distribution device (7) and the reaction chamber (8), wherein an exhaust on-off valve (10) is provided on the exhaust pipeline (4). An atomic layer deposition apparatus and method are further disclosed.
Inventors:
WEI JINGFENG (CN)
FU XINYU (CN)
RONG YANDONG (CN)
FU XINYU (CN)
RONG YANDONG (CN)
Application Number:
PCT/CN2018/121168
Publication Date:
April 02, 2020
Filing Date:
December 14, 2018
Export Citation:
Assignee:
BEIJING NAURA MICROELECTRONICS EQUIPMENT CO LTD (CN)
International Classes:
C23C16/455
Domestic Patent References:
| WO2009142905A1 | 2009-11-26 |
Foreign References:
| CN102312221A | 2012-01-11 | |||
| CN102312221A | 2012-01-11 | |||
| CN106401901A | 2017-02-15 | |||
| US20130125818A1 | 2013-05-23 | |||
| CN103943534A | 2014-07-23 |
Attorney, Agent or Firm:
TEE & HOWE INTELLECTUAL PROPERTY ATTORNEYS (CN)
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