Title:
GAS FOR PLASMA REACTION, DRY ETCHING METHOD, AND METHOD FOR FORMING FLUOROCARBON FILM
Document Type and Number:
WIPO Patent Application WO/2008/075637
Kind Code:
A1
Abstract:
Disclosed is a gas for plasma reactions, which contains perfluoro-(3-methylenecyclopentene). Also disclosed is a dry etching method having a step for dry etching an object base to be etched within a process chamber by supplying the gas for plasma reactions into the chamber. Further disclosed is a method for forming a fluorocarbon film by CVD on the surface of an object to be processed within a process chamber by supplying the gas for plasma reactions into the chamber. The gas for plasma reactions exhibits high selectivity for semiconductor materials and enables to form a finer pattern having a good rectangular shape even when the resist as a mask is thin. The gas for plasma reactions enables to perform an etching having a good balance between etching rate and selectivity even with a high-density plasma. In addition, the gas for plasma reactions enables to form a fluorocarbon film having low stress relaxation even after a heat treatment.
Inventors:
SUGIMOTO TATSUYA (JP)
NAKAMURA MASAHIRO (JP)
NAKAMURA MASAHIRO (JP)
Application Number:
PCT/JP2007/074213
Publication Date:
June 26, 2008
Filing Date:
December 17, 2007
Export Citation:
Assignee:
ZEON CORP (JP)
SUGIMOTO TATSUYA (JP)
NAKAMURA MASAHIRO (JP)
SUGIMOTO TATSUYA (JP)
NAKAMURA MASAHIRO (JP)
International Classes:
H01L21/3065; C08F2/52; C08F36/04; C23C16/50; C07C23/08
Domestic Patent References:
| WO2001081287A1 | 2001-11-01 |
Foreign References:
| JPH06338479A | 1994-12-06 |
Attorney, Agent or Firm:
OHISHI, Haruhito (6-1 Uchikanda 3-chome,Chiyoda-ku, Tokyo 47, JP)
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