Title:
GAS SENSOR ELEMENT PROVIDED WITH NOBLE METAL CHALCOGENIDE THIN FILM, AND GAS SENSOR
Document Type and Number:
WIPO Patent Application WO/2023/026938
Kind Code:
A1
Abstract:
A transition metal chalcogenide suitable as the sensitive part of a semiconductor gas sensor is proposed. This gas sensor element for a semiconductor gas sensor is provided with a substrate and a sensitive part for gas detection formed on the substrate. The sensitive part is formed from a thin film of a noble metal chalcogenide compound. This noble metal chalcogenide compound is preferably a Pt, Pd, Ir or Ru chalcogenide compound. Specifically, this is preferably a thin film of PtS2, PtSe2, PdS2, PdSe2, RuS2, RuSe2, IrS2, Ir2S3, IrSe2. The sensitive part, formed from a thin film of this noble metal chalcogenide compound, exhibits high responsivity with high sensitivity to various detection gases, and can achieve reduction in sensitive part of gas sensor.
Inventors:
NAKAZAWA TATSUYA (JP)
KIM HYUNG JUN (KR)
CHUNG SEUNG MIN (KR)
KIM DONG HYUN (KR)
SOHN IN KYU (KR)
KIM JAE HYEOK (KR)
SHIN DA IN (KR)
KIM HYUNG JUN (KR)
CHUNG SEUNG MIN (KR)
KIM DONG HYUN (KR)
SOHN IN KYU (KR)
KIM JAE HYEOK (KR)
SHIN DA IN (KR)
Application Number:
PCT/JP2022/031143
Publication Date:
March 02, 2023
Filing Date:
August 18, 2022
Export Citation:
Assignee:
TANAKA PRECIOUS METAL IND (JP)
UNIV INDUSTRY FOUNDATION YONSEI UNIV (KR)
UNIV INDUSTRY FOUNDATION YONSEI UNIV (KR)
International Classes:
G01N27/12; G01N27/04
Domestic Patent References:
| WO2022163363A1 | 2022-08-04 |
Foreign References:
| KR101903147B1 | 2018-10-01 |
Other References:
YIM CHANYOUNG, LEE KANGHO, MCEVOY NIALL, O’BRIEN MARIA, RIAZIMEHR SARAH, BERNER NINA C., CULLEN CONOR P., KOTAKOSKI JANI, MEYER JA: "High-Performance Hybrid Electronic Devices from Layered PtSe 2 Films Grown at Low Temperature", ACS NANO, AMERICAN CHEMICAL SOCIETY, US, vol. 10, no. 10, 25 October 2016 (2016-10-25), US , pages 9550 - 9558, XP093038816, ISSN: 1936-0851, DOI: 10.1021/acsnano.6b04898
SHARMA SUMIT; MOUDGIL AKSHAY; MISHRA PRASHANT; DAS SAMARESH: "Platinum Diselenide Thin-film based Field Effect Transistor for Ammonia Detection", 2020 5TH IEEE INTERNATIONAL CONFERENCE ON EMERGING ELECTRONICS (ICEE), IEEE, 26 November 2020 (2020-11-26), pages 1 - 4, XP034127481, DOI: 10.1109/ICEE50728.2020.9777024
REN JIAN-HUA; YANG ZI-HAN; HUANG TAO; HUANG WEI-QING; HU WANG-YU; HUANG GUI-FANG: "Monolayer PtTe2: A promising candidate for NO2 sensor with ultrahigh sensitivity and selectivity", PHYSICA E: LOW-DIMENSIONAL SYSTEMS AND NANOSTRUCTURES, ELSEVIER SCIENCE BV, NL, vol. 134, 9 August 2021 (2021-08-09), NL , XP086764136, ISSN: 1386-9477, DOI: 10.1016/j.physe.2021.114925
SU TENG-YU, CHEN YU-ZE, WANG YI-CHUNG, TANG SHIN-YI, SHIH YU-CHUAN, CHENG FALIANG, WANG ZHIMING M., LIN HEH-NAN, CHUEH YU-LUN: "Highly sensitive, selective and stable NO 2 gas sensors with a ppb-level detection limit on 2D-platinum diselenide films", JOURNAL OF MATERIALS CHEMISTRY C, ROYAL SOCIETY OF CHEMISTRY, GB, vol. 8, no. 14, 9 April 2020 (2020-04-09), GB , pages 4851 - 4858, XP093038815, ISSN: 2050-7526, DOI: 10.1039/C9TC05747A
SHARMA SUMIT; MOUDGIL AKSHAY; MISHRA PRASHANT; DAS SAMARESH: "Platinum Diselenide Thin-film based Field Effect Transistor for Ammonia Detection", 2020 5TH IEEE INTERNATIONAL CONFERENCE ON EMERGING ELECTRONICS (ICEE), IEEE, 26 November 2020 (2020-11-26), pages 1 - 4, XP034127481, DOI: 10.1109/ICEE50728.2020.9777024
REN JIAN-HUA; YANG ZI-HAN; HUANG TAO; HUANG WEI-QING; HU WANG-YU; HUANG GUI-FANG: "Monolayer PtTe2: A promising candidate for NO2 sensor with ultrahigh sensitivity and selectivity", PHYSICA E: LOW-DIMENSIONAL SYSTEMS AND NANOSTRUCTURES, ELSEVIER SCIENCE BV, NL, vol. 134, 9 August 2021 (2021-08-09), NL , XP086764136, ISSN: 1386-9477, DOI: 10.1016/j.physe.2021.114925
SU TENG-YU, CHEN YU-ZE, WANG YI-CHUNG, TANG SHIN-YI, SHIH YU-CHUAN, CHENG FALIANG, WANG ZHIMING M., LIN HEH-NAN, CHUEH YU-LUN: "Highly sensitive, selective and stable NO 2 gas sensors with a ppb-level detection limit on 2D-platinum diselenide films", JOURNAL OF MATERIALS CHEMISTRY C, ROYAL SOCIETY OF CHEMISTRY, GB, vol. 8, no. 14, 9 April 2020 (2020-04-09), GB , pages 4851 - 4858, XP093038815, ISSN: 2050-7526, DOI: 10.1039/C9TC05747A
Attorney, Agent or Firm:
ORIGINATE IP (JP)
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