Title:
GAS SENSOR AND ORGANIC TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2016/047340
Kind Code:
A1
Abstract:
The present invention provides: a gas sensor which comprises an organic transistor and has high detection sensitivity; and an organic transistor. A gas sensor according to the present invention comprises a bottom-gate organic transistor which is provided with a source electrode, a drain electrode, a gate electrode, a gate insulating layer, an organic semiconductor layer, and a receptor layer that is arranged between the gate insulating layer and the organic semiconductor layer and contains a compound that interacts with gas molecules which are the objects to be detected.
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Inventors:
ICHIKI TAKAHIKO (JP)
Application Number:
PCT/JP2015/073718
Publication Date:
March 31, 2016
Filing Date:
August 24, 2015
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
G01N27/00; G01N27/414; H01L21/28; H01L29/786; H01L51/05
Foreign References:
| US20100140597A1 | 2010-06-10 | |||
| JP2010151659A | 2010-07-08 | |||
| JP5422666B2 | 2014-02-19 | |||
| JP2011123076A | 2011-06-23 | |||
| JP2009150714A | 2009-07-09 | |||
| US20060231882A1 | 2006-10-19 |
Attorney, Agent or Firm:
WATANABE Mochitoshi et al. (JP)
Mochitoshi Watanabe (JP)
Mochitoshi Watanabe (JP)
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