Title:
GAS-TIGHT ENVIRONMENT-BASED HIGH PULSE CURRENT GENERATION DEVICE HAVING NANOSECOND-SCALE RISE TIME
Document Type and Number:
WIPO Patent Application WO/2020/114081
Kind Code:
A1
Abstract:
Disclosed is a gas-tight environment-based high pulse current generation device having a nanosecond-scale rise time, the device comprising a gas-tight cavity having a pressure greater than or equal to the normal atmospheric pressure. An energy storage capacitor, a waveshaping resistor, and discharging switches are installed within an environment having a sealed gas. Each element thus has superior insulation and withstand voltage properties, and a gap between the discharging switches is further reduced, thereby further reducing the inductance of the discharging switches. In addition, since discharge occurs in the same gas-tight environment, a waveshaping capacitor, the resistor, and the discharging switches can be installed in a compact manner, and moreover the gap distance of the discharging switches and wire connection distances between the energy storage capacitor, the waveshaping resistor, and the discharging switches reduce the inductance of connecting wires in a loop, thereby effectively generating a high pulse current wave having a nanosecond-scale rise time.
Inventors:
YAO XUELING (CN)
CHEN JINGLIANG (CN)
SUN JINRU (CN)
TIAN XIANGYU (CN)
CHEN JINGLIANG (CN)
SUN JINRU (CN)
TIAN XIANGYU (CN)
Application Number:
PCT/CN2019/110583
Publication Date:
June 11, 2020
Filing Date:
October 31, 2019
Export Citation:
Assignee:
UNIV XI AN JIAOTONG (CN)
International Classes:
H02M9/04; H03K3/53
Foreign References:
| CN109617447A | 2019-04-12 | |||
| CN203104331U | 2013-07-31 | |||
| CN203104331U | 2013-07-31 | |||
| CN1588572A | 2005-03-02 | |||
| CN101051577A | 2007-10-10 | |||
| RU2374762C1 | 2009-11-27 |
Attorney, Agent or Firm:
XI'AN ZHONGHE ZHICHENG INTELLECTUAL PROPERTY AGENCY (GENERAL PARTNERSHIP) (CN)
Download PDF: