Title:
GASIFICATION DEVICE, SUBSTRATE PROCESSING DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2016/199193
Kind Code:
A1
Abstract:
[Problem] To provide a technique for generating stably a gasified gas in a liquid gasification process.
[Solution] The gasification device comprises: a gasification container having an introduction port and an discharge port for a carrier gas; a dripping nozzle constituted in such a manner as to drip into a gasification container a liquid containing two or more substances whereof the boiling points inside the gasification container are different; a first gasification surface, which is horizontal or is inclined with respect to the horizontal, provided inside the gasification container at a dripping position of the liquid from the dripping nozzle; a heater for heating the first gasification surface; and an inclination angle adjustment mechanism for adjusting the inclination angle of the first gasification surface.
Inventors:
TATENO HIDETO (JP)
HARA DAISUKE (JP)
HARA DAISUKE (JP)
Application Number:
PCT/JP2015/066488
Publication Date:
December 15, 2016
Filing Date:
June 08, 2015
Export Citation:
Assignee:
HITACHI INT ELECTRIC INC (JP)
International Classes:
H01L21/31; C23C16/455
Domestic Patent References:
| WO2013094680A1 | 2013-06-27 |
Foreign References:
| JPH11335845A | 1999-12-07 | |||
| JP2005256105A | 2005-09-22 | |||
| JP2003213422A | 2003-07-30 | |||
| JP2001011634A | 2001-01-16 |
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