Title:
GATE DRIVE CIRCUIT AND POWER CONVERSION DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/244361
Kind Code:
A1
Abstract:
This gate drive circuit is connected through a gate resistor to a semiconductor element having a gate terminal and drives the semiconductor element by changing the gate voltage applied to the gate terminal. When the condition is satisfied that the current flowing through the semiconductor element is a predetermined first threshold value to a predetermined second threshold value that is larger than the first threshold value, inclusive, and the temperature of the semiconductor element is a predetermined third threshold value to a predetermined fourth threshold value that is larger than the third threshold value, inclusive, the gate drive circuit switches the resistance value of the gate resistor when turning on the semiconductor element to a larger value than when the condition is not satisfied.
Inventors:
SAKURAI NAOKI (JP)
DOI MASAHIRO (JP)
DOI MASAHIRO (JP)
Application Number:
PCT/JP2022/007049
Publication Date:
November 24, 2022
Filing Date:
February 21, 2022
Export Citation:
Assignee:
HITACHI ASTEMO LTD (JP)
International Classes:
H02M1/08; H02M7/48
Domestic Patent References:
| WO2021245719A1 | 2021-12-09 |
Foreign References:
| JP2001169407A | 2001-06-22 | |||
| JP2003274672A | 2003-09-26 | |||
| JP2015065742A | 2015-04-09 | |||
| JPH05328746A | 1993-12-10 |
Attorney, Agent or Firm:
SUNNEXT INTERNATIONAL PATENT OFFICE (JP)
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