Title:
GATE DRIVE CIRCUIT FOR SEMICONDUCTOR SWITCHING ELEMENT, ELECTRIC MOTOR CONTROL SYSTEM, AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/057598
Kind Code:
A1
Abstract:
Provided is a gate drive circuit for a semiconductor switching element, the gate drive circuit driving and controlling the semiconductor switching element by using two independent gate electrodes, and being characterized in that the time constant of the voltage of a gate electrode is set to be longer when a second gate electrode (Gc) is off than when a first gate electrode (Gs) is off, and the voltage V* of the second gate electrode (Gc) at the point in time that a maximum power is applied when the semiconductor switching element (31) is turned off satisfies expression (1). Expression (1): 0 ≤ V* ≤ prescribed value < +Vp (in the expression, +Vp is the gate drive voltage when the semiconductor switching element is on)
Inventors:
SUZUKI HIROSHI (JP)
MIYOSHI TOMOYUKI (JP)
FURUKAWA TOMOYASU (JP)
MIYOSHI TOMOYUKI (JP)
FURUKAWA TOMOYASU (JP)
Application Number:
PCT/JP2023/014707
Publication Date:
March 21, 2024
Filing Date:
April 11, 2023
Export Citation:
Assignee:
HITACHI POWER SEMICONDUCTOR DEVICE LTD (JP)
International Classes:
H02M1/08; H01L29/739; H01L29/78; H02M7/48; H03K17/08; H03K17/64
Foreign References:
| JPH06125256A | 1994-05-06 | |||
| JP2015154701A | 2015-08-24 | |||
| JP2011135731A | 2011-07-07 | |||
| JP2010259313A | 2010-11-11 |
Attorney, Agent or Firm:
ISONO INTERNATIONAL PATENT OFFICE, P.C. (JP)
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