Title:
GATE DRIVE CIRCUIT, SWITCHING CIRCUIT, SWITCHING POWER SUPPLY, AND CONTROL CIRCUIT FOR SAME
Document Type and Number:
WIPO Patent Application WO/2023/140353
Kind Code:
A1
Abstract:
A first switch SW1 is a p-channel metal oxide semiconductor (PMOS) transistor having a source connected to a constant-voltage line. A diode D1 is connected between a drain of the first switch SW1 and a bootstrap line VB. A second switch SW2 is connected between the drain of the first switch SW1 and a fixed-voltage line. A comparison circuit 210 generates a detection signal OVDET that indicates a magnitude relationship between a high-side power supply voltage VBS and a threshold voltage VTH, the high-side power supply voltage being the potential difference between the bootstrap line VB and a switching line VS. A driver 212 for a clamp drives the first switch SW1 and the second switch SW2 in a complementary manner in accordance with the detection signal OVDET.
Inventors:
NAKAJIMA DAICHI (JP)
SHINOZAKI TOMOHISA (JP)
SHINOZAKI TOMOHISA (JP)
Application Number:
PCT/JP2023/001706
Publication Date:
July 27, 2023
Filing Date:
January 20, 2023
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H02M1/08
Domestic Patent References:
| WO2021117821A1 | 2021-06-17 | |||
| WO2017126103A1 | 2017-07-27 |
Foreign References:
| JP2021090264A | 2021-06-10 | |||
| US20080278135A1 | 2008-11-13 | |||
| US20140152275A1 | 2014-06-05 |
Attorney, Agent or Firm:
MORISHITA Sakaki (JP)
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