Title:
GATE DRIVE CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2020/213513
Kind Code:
A1
Abstract:
Provided is a gate drive circuit which drives a gate drive-type semiconductor element with a constant current, said gate drive circuit comprising: a drive MOS transistor (4) supplying a constant current to a gate in the semiconductor element; a differential amplifier (6) providing a drive signal to a gate in the drive MOS transistor; reference power sources (7, 7a, 7b, 7c) providing reference voltages, which are for a target constant current flowing to the drive MOS transistor, to the differential amplifier; and control circuits (5, 5a, 5b, 5c) detecting a current flowing in the drive MOS transistor, and during a period of time until the detected current value reaches the target constant current, setting the reference voltages from the reference power sources such that the current value is greater than the target constant current.
Inventors:
KOBAYASHI ATSUSHI (JP)
Application Number:
PCT/JP2020/015990
Publication Date:
October 22, 2020
Filing Date:
April 09, 2020
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
H02M1/08; H03K17/04; H03K17/56; H03K17/567
Foreign References:
| JP2015231117A | 2015-12-21 | |||
| JP2012129973A | 2012-07-05 | |||
| JP2016174454A | 2016-09-29 | |||
| JP2012114585A | 2012-06-14 |
Attorney, Agent or Firm:
SATO INTERNATIONAL PATENT FIRM (JP)
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