Title:
GATE DRIVE DEVICE FOR POWER SEMICONDUCTOR ELEMENT, AND POWER CONVERSION DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/089711
Kind Code:
A1
Abstract:
A gate drive device for a plurality of series-connected power semiconductor elements comprises: a gate drive voltage output unit that is provided so as to correspond to each of the power semiconductor elements and that outputs a gate drive voltage; a gate line that supplies the gate drive voltage outputted from the gate drive voltage output unit to a gate terminal of the corresponding power semiconductor element; a magnetic coupling unit that magnetically couples gate lines to each other; and a capacitor that is provided so as to correspond to each of the power semiconductor elements and that is connected between a current inflow terminal and the gate terminal of the relevant power semiconductor element.
Inventors:
URAKABE TAKAHIRO (JP)
HAGIWARA MAKOTO (JP)
HIGAKI YUSUKE (JP)
KOYANAGI KIMIYUKI (JP)
NAKASHIMA JUNICHI (JP)
HAGIWARA MAKOTO (JP)
HIGAKI YUSUKE (JP)
KOYANAGI KIMIYUKI (JP)
NAKASHIMA JUNICHI (JP)
Application Number:
PCT/JP2021/042331
Publication Date:
May 25, 2023
Filing Date:
November 17, 2021
Export Citation:
Assignee:
TOKYO INST TECH (JP)
MITSUBISHI ELECTRIC CORP (JP)
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H03K17/10; H02M1/08
Domestic Patent References:
| WO2020183702A1 | 2020-09-17 |
Foreign References:
| JP2002204578A | 2002-07-19 | |||
| JPS61237513A | 1986-10-22 | |||
| JP2010193563A | 2010-09-02 | |||
| JP2006042512A | 2006-02-09 |
Attorney, Agent or Firm:
AOKI, Atsushi et al. (JP)
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