Title:
GATE DRIVING CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2018/100647
Kind Code:
A1
Abstract:
According to the present invention, a plurality of gate driver units (3, 4) respectively drive a plurality of semiconductor switching elements (SW1, SW2) connected in parallel. A control circuit (5) controls the plurality of gate driver units (3, 4). The gate driver units (3, 4) each have: a gate driver (6) that supplies a gate voltage to gates of the corresponding semiconductor switching elements (SW1, SW2); and a potential difference measuring unit (7) that measures, for each cycle of an output frequency, a potential difference (Va) generated by a wire inductance on an emitter side of the corresponding semiconductor switching elements (SW1, SW2). The control circuit (5) adjusts the gate voltage (VGE), supplied by the gate driver (6) of each of the gate driver units (3, 4), such that potential differences (Va) of the plurality of semiconductor switching elements (SW1, SW2) during a turn-on or turn-off switching operation are equal to each other.
Inventors:
SAITO SHOTA (JP)
NAKAMOTO KEISUKE (JP)
NAKAMOTO KEISUKE (JP)
Application Number:
PCT/JP2016/085424
Publication Date:
June 07, 2018
Filing Date:
November 29, 2016
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H03K17/567; H02M1/08
Foreign References:
| JP2004187360A | 2004-07-02 | |||
| JP2015050925A | 2015-03-16 | |||
| JP2012213294A | 2012-11-01 |
Attorney, Agent or Firm:
TAKADA, Mamoru et al. (JP)
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