Title:
GATE MANUFACTURING METHOD FOR THIN-FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2020/134018
Kind Code:
A1
Abstract:
Disclosed is a gate manufacturing method for a thin-film transistor. The method includes the steps of: exposure and developing, first wet etching, photoresist burning, second wet etching, and photoresist layer (30) removal, such that a trapezoidal gate metal layer (20) is manufactured on a substrate (10). The taper angle of the gate metal layer (20) is relatively small, such that the occurrence rate of undercut and electrostatic discharge can be reduced, thereby achieving the aim of improving an operating window during a manufacturing procedure.
Inventors:
WANG WENLONG (CN)
XU XIANGYANG (CN)
XU XIANGYANG (CN)
Application Number:
PCT/CN2019/095016
Publication Date:
July 02, 2020
Filing Date:
July 08, 2019
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD (CN)
International Classes:
H01L21/28
Foreign References:
| CN109686662A | 2019-04-26 | |||
| CN102651337A | 2012-08-29 | |||
| CN108538860A | 2018-09-14 | |||
| CN101320714A | 2008-12-10 |
Attorney, Agent or Firm:
ESSEN PATENT & TRADEMARK AGENCY (CN)
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