Title:
GATE STACK FORMATION METHOD
Document Type and Number:
WIPO Patent Application WO/2012/014642
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a higher-k gate stack which contains a HfO2 layer as a gate insulating film, does not undergo the formation of an SiO2 layer at the interface, and has an extremely small equivalent oxide film thickness.
A gate stack formation method characterized by comprising forming a HfO2 layer on a silicon substrate, inserting an oxygen control metal layer having an oxygen absorption effect between the HfO2 layer and a gate electrode layer, thermally treating the resulting product to crystallize the HfO2 layer and increase the dielectric constant and, at the same time, removing SiO2 formed at the HfO2/Si interface utilizing the released oxygen absorption upon the thermal treatment of HfO2 and the effect of removal of oxygen from an HfO2 lattice.
Inventors:
MORITA Yukinori (16-1 Onogawa, Tsukuba-sh, Ibaraki 69, 〒3058569, JP)
森田 行則 (〒69 茨城県つくば市小野川１６－１ 独立行政法人産業技術総合研究所内 Ibaraki, 〒3058569, JP)
MIGITA Shinji (16-1 Onogawa, Tsukuba-sh, Ibaraki 69, 〒3058569, JP)
森田 行則 (〒69 茨城県つくば市小野川１６－１ 独立行政法人産業技術総合研究所内 Ibaraki, 〒3058569, JP)
MIGITA Shinji (16-1 Onogawa, Tsukuba-sh, Ibaraki 69, 〒3058569, JP)
Application Number:
JP2011/065430
Publication Date:
February 02, 2012
Filing Date:
July 06, 2011
Export Citation:
Assignee:
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (3-1 Kasumigaseki 1-chome, Chiyoda-ku Tokyo, 21, 〒1008921, JP)
独立行政法人産業技術総合研究所 (〒21 東京都千代田区霞が関１丁目３番１号 Tokyo, 〒1008921, JP)
MORITA Yukinori (16-1 Onogawa, Tsukuba-sh, Ibaraki 69, 〒3058569, JP)
森田 行則 (〒69 茨城県つくば市小野川１６－１ 独立行政法人産業技術総合研究所内 Ibaraki, 〒3058569, JP)
独立行政法人産業技術総合研究所 (〒21 東京都千代田区霞が関１丁目３番１号 Tokyo, 〒1008921, JP)
MORITA Yukinori (16-1 Onogawa, Tsukuba-sh, Ibaraki 69, 〒3058569, JP)
森田 行則 (〒69 茨城県つくば市小野川１６－１ 独立行政法人産業技術総合研究所内 Ibaraki, 〒3058569, JP)
International Classes:
H01L21/336; H01L21/316; H01L29/78
Claims: