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Title:
GATE TUBE DEVICE PREPROCESSING METHOD
Document Type and Number:
WIPO Patent Application WO/2020/206858
Kind Code:
A1
Abstract:
Disclosed is a gate tube device preprocessing method. The method comprises: (1) carrying out first voltage scanning on a gate tube by selecting a voltage scanning range and setting a first limit current Icc1, so as to acquire a resistance state R1 of a subthreshold area of the gate tube; (2) setting an nth limit current Icc(n) according to a resistance state Rn-1 of the subthreshold area of the gate tube after (n-1)th voltage scanning, and carrying out nth voltage scanning on the gate tube, so as to acquire a resistance state Rn of the subthreshold area thereof, wherein Icc(n-1) < Icc(n), and an initial value of n is 2; and (3) under a read voltage, if a high-resistance-state resistance value of a gate tube device after nth voltage scanning is greater than a high-resistance-state resistance value of the gate tube device after first voltage scanning, stopping carrying out voltage scanning on the gate tube device, otherwise, n = n +1, and turning to step (2). By means of the preprocessing method, an on-state current and an on-off ratio of a gate tube are simultaneously improved, and the performance of the gate tube is thus improved, such that the application thereof in a storage device is wider.

Inventors:
TONG HAO (CN)
HE DA (CN)
MIAO XIANGSHUI (CN)
Application Number:
PCT/CN2019/095696
Publication Date:
October 15, 2020
Filing Date:
July 12, 2019
Export Citation:
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Assignee:
UNIV HUAZHONG SCIENCE TECH (CN)
International Classes:
H01L45/00
Domestic Patent References:
WO2019009296A12019-01-10
WO2017124873A12017-07-27
Foreign References:
CN102129886A2011-07-20
CN106992251A2017-07-28
Attorney, Agent or Firm:
HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY PATENT AGENCY CENTER (CN)
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