Title:
GaxIn1-xN SUBSTRATE AND GaxIn1-xN SUBSTRATE CLEANING METHOD
Document Type and Number:
WIPO Patent Application WO/2008/018237
Kind Code:
A1
Abstract:
It is possible to provide a GaxIn1-xN substrate capable of achieving a stable growth of a high-quality epitaxial film and a cleaning method for obtaining the GaxIn1-xN substrate. When the GaxIn1-xN substrate has a 2-inch diameter, the number of particles existing on the GaxIn1-xN substrate and having a particle diameter not smaller than 0.2 μm is not greater than 20. Moreover, in a photoelectric spectrum on the surface of the GaxIn1-xN substrate obtained by the X-ray photoelectric spectrum method at the detection angle of 10 degrees, the ratio of the peak area of the C1s electron and the N1s electron (peak area of C1s electron/peak area of N1s electron) is not greater than 3.
Inventors:
UEMURA, Tomoki (1-1 Koyakita 1-chome, Itami-sh, Hyogo 16, 6640016, JP)
上村 智喜 (〒16 兵庫県伊丹市昆陽北１丁目１番１号 住友電気工業株式会社伊丹製作所内 Hyogo, 6640016, JP)
上村 智喜 (〒16 兵庫県伊丹市昆陽北１丁目１番１号 住友電気工業株式会社伊丹製作所内 Hyogo, 6640016, JP)
Application Number:
JP2007/062075
Publication Date:
February 14, 2008
Filing Date:
June 15, 2007
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES, LTD. (5-33 Kitahama 4-chome, Chuo-ku Osaka-sh, Osaka 41, 5410041, JP)
住友電気工業株式会社 (〒41 大阪府大阪市中央区北浜四丁目５番３３号 Osaka, 5410041, JP)
UEMURA, Tomoki (1-1 Koyakita 1-chome, Itami-sh, Hyogo 16, 6640016, JP)
住友電気工業株式会社 (〒41 大阪府大阪市中央区北浜四丁目５番３３号 Osaka, 5410041, JP)
UEMURA, Tomoki (1-1 Koyakita 1-chome, Itami-sh, Hyogo 16, 6640016, JP)
International Classes:
H01L21/304; B08B3/08; B08B3/12; C30B29/38; H01L33/32
Attorney, Agent or Firm:
NAKANO, Minoru et al. (1-3 Shimaya 1-chome, Konohana-ku, Osaka-sh, Osaka 24, 5540024, JP)
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