Title:
GENERATION DEVICE AND METHOD FOR 2.1 μM WAVEBAND PULSE LASER AND USE THEREOF
Document Type and Number:
WIPO Patent Application WO/2018/040021
Kind Code:
A1
Abstract:
A generation device (100) for generating a 2.1 μm waveband pulse laser, comprising a semiconductor pump pulse laser, a pump light focusing and coupling system (2) and a resonant cavity (7). The resonant cavity (7) comprises an end pump laser medium (4), and the end pump laser medium (4) is a vanadate crystal doped with neodymium ions; the pump light generated by the semiconductor pump pulse laser is coupled by the pump light focusing and coupling system (2) and enters the vanadate crystal doped with neodymium ions, the neodymium ions are subjected to simulated radiation to generate a 1.34 μm waveband pulse laser, and the 1.34 μm waveband pulse laser oscillates in the resonant cavity (7); and the vanadate crystal applies a Raman frequency conversion effect and a mode locking effect to the 1.34 μm waveband pulse laser three times to output the 2.1 μm waveband pulse laser. With the generation device for the 2.1 μm waveband pulse laser, the limitation of a relatively low optical damage threshold value of a saturable absorber is avoided, so that a 2.1 μm waveband ultrashort pulse laser with a high power and high energy is obtained.
Inventors:
YU YONGQIN (CN)
XIE JIAN (CN)
LIANG DEZHI (CN)
DU CHENLIN (CN)
RUAN SHUANGCHEN (CN)
XIE JIAN (CN)
LIANG DEZHI (CN)
DU CHENLIN (CN)
RUAN SHUANGCHEN (CN)
Application Number:
PCT/CN2016/097669
Publication Date:
March 08, 2018
Filing Date:
August 31, 2016
Export Citation:
Assignee:
UNIV SHENZHEN (CN)
International Classes:
H01S3/30; H01S3/113; H01S3/16
Foreign References:
| CN105375251A | 2016-03-02 | |||
| CN102244361A | 2011-11-16 | |||
| CN101814695A | 2010-08-25 | |||
| CN102761051A | 2012-10-31 | |||
| CN104901157A | 2015-09-09 | |||
| CN202276060U | 2012-06-13 |
Other References:
CHENLIN DU ET AL.: "YV04/Nd: YVO4/YVO4 self-Raman laser at 1764nm", APPLIED PHYSICS B LASERS AND OPTICS, 8 December 2013 (2013-12-08), pages 569 - 574, ISSN: 1432-0649
Attorney, Agent or Firm:
HENSEN INTELLECTUAL PROPERTY FIRM (CN)
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